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The Innovation Materials > 2025 Vol. 3 > No. 3 > 100153
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Aluminum Scandium Nitride based frequency-switchable acoustic devices for next-generation mobile communication

  • 1.

    School of Software & Microelectronics, Peking University, Beijing 102600, China

  • 2.

    Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

  • 3.

    School of Integrated Circuits, Peking University, Beijing 100871, China

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  • Corresponding author: guowei@nimte.ac.cn
  • Received Date:  February 02, 2025
    Accepted Date:  August 02, 2025
    Published Online:  August 07, 2025
The Innovation Materials  3(3),  https://doi.org/10.59717/j.xinn-mater.2025.100153  |  Cite this article
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  • [1] Mo D., Dabas S., Rassay S., et al. (2022). Complementary-switchable dual-mode SHF scandium aluminum nitride BAW resonator. IEEE Trans. Electron. Devices 69:1−8. DOI:10.1109/TED.2022.3183963

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    [2] Nam S., Peng W., Wang P., et al. (2023). A mm-wave trilayer AlN/ScAlN/AlN higher order mode FBAR. IEEE Microw. Wirel. Technol. Lett. 33:803−806. DOI:10.1109/LMWT.2023.3271865

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    [5] Ryoo S., Kim K., Choi W., et al. (2024). Fabrication of ultrathin ferroelectric Al0.7Sc0.3N films under complementary‐metal‐oxide‐semiconductor compatible conditions by using HfN0.4 electrode. Adv. Mater. 37: 2413295. DOI:10.1002/adma.202413295.

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  • Cite this article:

    Li J., Meng F., Chen S., et al. (2025). Aluminum Scandium Nitride based frequency-switchable acoustic devices for next-generation mobile communication. The Innovation Materials 3:100153. https://doi.org/10.59717/j.xinn-mater.2025.100153
    Li J., Meng F., Chen S., et al. (2025). Aluminum Scandium Nitride based frequency-switchable acoustic devices for next-generation mobile communication. The Innovation Materials 3:100153. https://doi.org/10.59717/j.xinn-mater.2025.100153

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