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The Innovation Materials > 2023 Vol. 1 > No. 1 > 100004
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Band anisotropy in thermoelectric materials

  • 1.

    State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China

  • 2.

    Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030000, China

  • 3.

    These authors contributed equally

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The Innovation Materials  1(1),  https://doi.org/10.59717/j.xinn-mater.2023.100004  |  Cite this article
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  • [1] Li, A., Hu, C., He, B., et al. (2021). Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor. Nat. Commun. 12: 5408. DOI: 10.1038/s41467-021-25722-0.

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    [2] Jin, M., Lin, S., Li, W., et al. (2021). Nearly isotropic transport properties in anisotropically structured n-type single-crystalline Mg3Sb2. Mater. Today Phys. 21: 100508. DOI: 10.1016/j.mtphys.2021.100508.

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  • Cite this article:

    Liu J., Li A., Fu C., et al., (2023). Band anisotropy in thermoelectric materials. The Innovation Materials 1(1), 100004. https://doi.org/10.59717/j.xinn-mater.2023.100004
    Liu J., Li A., Fu C., et al., (2023). Band anisotropy in thermoelectric materials. The Innovation Materials 1(1), 100004. https://doi.org/10.59717/j.xinn-mater.2023.100004

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