The real-space charge density of the ZrO2 with sub-Ångström resolution is observed.
The electronic contribution to the total spontaneous polarization is non-negligible.
The local polarization suggests a gradual increase in the covalent nature of the Zr-O bond.
| [1] | Valasek, J. (1921). Piezo-electric and allied phenomena in rochelle salt. Phys. Rev. 17: 475−481. DOI: 10.1103/PhysRev.17.475. |
| [2] | Kittel, C. (1951). Theory of antiferroelectric crystals. Phys. Rev. 82: 729−732. DOI: 10.1103/PhysRev.82.729. |
| [3] | Jaffe, B. (1961). Antiferroelectric ceramics with field-enforced transitions-new nonlinear circuit element. Proc. Inst. Radio. Eng. 49: 1264−1270. DOI: 10.1109/JRPROC.1961.287917. |
| [4] | Cohen, R. (1992). Origin of ferroelectricity in perovskite oxides. Nature 358: 136−138. DOI: 10.1038/358136a0. |
| [5] | Dash, L., Vast, N., Baranek, P.,et al. (2004). Electronic structure and electron energy-loss spectroscopy of ZrO2 zirconia. Phys. Rev. B 70: 245116. DOI: 10.1103/PhysRevB.70.245116. |
| [6] | Abe, T., Kim, S., Moriyoshi, C., et al. (2020). Visualization of spontaneous electronic polarization in Pb ion of ferroelectric PbTiO3 by synchrotron-radiation X-Ray diffraction. Appl. Phys. Lett. 117: 252905. DOI: 10.1063/5.0037396. |
| [7] | Kawamura, S., Magome, E., Moriyoshi, C.,et al. (2013). Electronic polarization in KNbO3 visualized by synchrotron radiation powder diffraction. Jpn. J. Appl. Phys. 52(9S1): 09KF04. DOI: 10.7567/JJAP.52.09KF04. |
| [8] | Boescke, T., Muller, J., Brauhaus, D., et al. (2011). Ferroelectricity in hafnium oxide thin films. Appl. Phys. Lett. 99: 102903. DOI: 10.1063/1.3636417. |
| [9] | Muller, J., Boscke, T., Brauhaus, D., et al. (2011). Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications. Appl. Phys. Lett. 99 : 112901. DOI: 10.1063/1.3636417. |
| [10] | Fan, Z., Deng, J., Wang, J.,et al. (2016). Ferroelectricity emerging in strained (111)-textured ZrO2 thin films. Appl. Phys. Lett. 108: 012906. DOI: 10.1063/1.4939660. |
| [11] | Mueller, J., Boescke, T.S., Schroeder, U., et al. (2012). Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett. 12: 4318−4323. DOI: 10.1021/nl302049k. |
| [12] | Huan, T., Sharma, V., Rossetti, G., et al. (2014). Pathways towards ferroelectricity in hafnia. Phys. Rev. B 90: 064111. DOI: 10.1103/PhysRevB.90.064111. |
| [13] | Schroeder, U., Park, M.H., Mikolajick, T., et al. (2022). The fundamentals and applications of ferroelectric HfO2. Nat. Rev. Mater. 7: 653−669. DOI: 10.1038/s41578-022-00431-2. |
| [14] | Cheema, S.S., Shanker, N., Wang, L.-C., et al. (2022). Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors. Nature 604: 65−72. DOI: 10.1038/s41586-022-04425-6. |
| [15] | Cheema, S.S., Shanker, N., Hsu, S.-L., et al. (2022). Emergent ferroelectricity in subnanometer binary oxide films on silicon. Science 376: 648−653. DOI: 10.1126/science.abm8642. |
| [16] | Clima, S., Wouters, D.J., Adelmann, C., et al. (2014). Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight. Appl Phys Lett 104: 092906. DOI: 10.1063/1.4867975. |
| [17] | Rushchanskii, K., Blugel, S., and Lezaic, M. (2021). Ordering of oxygen vacancies and related ferroelectric properties in HfO2-delta. Phys. Rev. Lett. 127: 087602. DOI: 10.1103/PhysRevLett.127.087602. |
| [18] | Grimley, E.D., Schenk, T., Mikolajick, T., et al. (2018). Atomic structure of domain and interphase boundaries in ferroelectric HfO2. Adv. Mater. Interfaces 5: 1701258. DOI: 10.1002/admi.201701258. |
| [19] | Ding, W., Zhang, Y., Tao, L.,et al. (2020). The atomic-scale domain wall structure and motion in HfO2-based ferroelectrics: A first-principle study. Acta Mater. 196: 556−564. DOI: 10.1016/j.actamat.2020.07.012. |
| [20] | Hsain, H.A., Lee, Y., Lancaster, S., et al. (2022). Role of oxygen source on buried interfaces in atomic-layer-deposited ferroelectric hafnia-zirconia thin films. ACS Appl. Mater. Interfaces 2 : 10.1021. DOI: 10.1021/acsami.2c11073. |
| [21] | Yi, S., Lin, B., Hsu, T.,et al. (2019). Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers. J. Eur. Ceram. Soc. 39: 4038−4045. DOI: 10.1016/j.jeurceramsoc.2019.05.065. |
| [22] | Gao, W., Addiego, C., Wang, H., et al. (2019). Real-space charge-density imaging with sub-ångström resolution by four-dimensional electron microscopy. Nature 575: 480−484. DOI: 10.1038/s41586-019-1649-6. |
| [23] | Fang, S., Wen, Y., Allen, C.S., et al. (2019). Atomic electrostatic maps of 1D channels in 2D semiconductors using 4D scanning transmission electron microscopy. Nat. Commun. 10: 1127. DOI: 10.1038/s41467-019-08904-9. |
| [24] | Ophus, C. (2019). Four-dimensional scanning transmission electron microscopy (4D-STEM): From scanning nanodiffraction to ptychography and beyond. Microsc. Microanal. 25: 563−582. DOI: 10.1017/S1431927619000497. |
| [25] | Lin, R., Zhang, R., Wang, C., et al. (2021). TEMimageNet training library and AtomSegNet deep-learning models for high-precision atom segmentation, localization, denoising, and deblurring of atomic-resolution images. Sci. Rep. 11: 386. DOI: 10.1038/s41598-021-84499-w. |
| [26] | Muelller-Caspary, K., Krause, F.F., Grieb, T., et al. (2017). Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy. Ultramicroscopy 178: 62−80. DOI: 10.1016/j.ultramic.2016.05.004. |
| [27] | Spaldin, N. (2012). A beginner’s guide to the modern theory of polarization. J. Solid State Chem. 195: 2−10. DOI: 10.1016/j.jssc.2012.05.010. |
| [28] | Caswell, T.A., Ercius, P., Tate, M.W., et al. (2009). A high-speed area detector for novel imaging techniques in a scanning transmission electron microscope. Ultramicroscopy 109: 304−311. DOI: 10.1016/j.ultramic.2008.11.023. |
| [29] | Mueller, K., Krause, F.F., Beche, A., et al. (2014). Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction. Nat. Commun. 5: 5653. DOI: 10.1038/ncomms6653. |
| [30] | Polakowski, P., and Muller, J. (2015). Ferroelectricity in undoped hafnium oxide. Appl. Phys. Lett. 106: 232905. DOI: 10.1063/1.4922272. |
| [31] | Lazić, I., Bosch, E.G.T., and Lazar, S. (2016). Phase contrast STEM for thin samples: integrated differential phase contrast. Ultramicroscopy 160: 265−280. DOI: 10.1016/j.ultramic.2015.10.011. |
| [32] | Mittmann, T., Materano, M., Chang, S.-C.,et al (2020). Impact of oxygen vacancy content in ferroelectric HZO films on the device performance. IEEE Inter Electron Devices Meet 1 : 973209. DOI: 10.1109/IEDM13553.2020.9372097. |
| [33] | Nelson, C., Winchester, B., Zhang, Y.,et al. (2011). Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces. Nano Lett. 11: 828−834. DOI: 10.1021/nl1041808. |
| [34] | Pan, Y. (2019). Influence of oxygen vacancies on the electronic and optical properties of zirconium dioxide from first-principles calculations. J. Electron. Mater. 48: 5154−5160. DOI: 10.1007/s11664-019-07325-0. |
| [35] | Cohen, R., and krakauer, H. (1990). Lattice-dynamics and origin of ferroelectricity in BaTiO3-linearized-augmented-plane-wave total-energy calculations. Phys. Rev. B 42: 6416−6423. DOI: 10.1103/PhysRevB.42.6416. |
| [36] | Chu, M., Szafraniak, I., Scholz, R., et al. (2004). Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites. Nat. Mater. 3: 87−90. DOI: 10.1038/nmat1057. |
| [37] | Ihlefeld, J.F., Harris, D.T., Keech, R., et al. (2016). Scaling effects in perovskite ferroelectrics: fundamental limits and process-structure-property relations. J. Am. Ceram. Soc. 99: 2537−2557. DOI: 10.1111/jace.14387. |
| [38] | Wang, Y., Zhong, W., and Zhang, P. (1995). Lateral size effects on cells in ferroelectric-films. Phys. Rev. B 51: 17235−17238. DOI: 10.1103/PhysRevB.51.17235. |
| [39] | Eastman, J.A. (2022). Another route to ferroelectric HfO2. Nat. Mater. 21: 845−847. DOI: 10.1038/s41563-022-01297-z. |
| [40] | Cheng, Y., Gao, Z., Ye, K., et al. (2022). Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film. Nat. Commun. 13: 645. DOI: 10.1038/s41467-022-28236-5. |
| Wang S., Li X., Jia Y., et al., (2024). Direct observation of charge density and electronic polarization in fluorite ferroelectrics by 4D-STEM. The Innovation Materials 2(2): 100068. https://doi.org/10.59717/j.xinn-mater.2024.100068 |
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Experimental setup and main principles
Real-space charge-density mapping and polar analysis in orthorhombic and tetragonal ZrO2
DFT calculation results of ZrO2 in the O-phase
Charge-density and polarization in polar-antipolar fixed state and the T-O phase interface