Article Contents
REVIEW   Open Access     Cite

Ferroelectric-based leaky integrate-and-fire neurons: A review on device design and performance optimization

More Information
  • DownLoad: Full size image
    1. Ferroelectric devices are promising candidates for implementing leaky integrate-and-fire (LIF) neurons.

      Foundational overview and device designs of ferroelectric/antiferroelectric neurons are introduced.

      Key performance metrics and optimization strategies are discussed.

      Applications of ferroelectric-based neurons for high-performance neuromorphic computing are presented.

  • The leaky integrate-and-fire (LIF) neurons implemented in hardware have been proposed as a key approach for neuromorphic computing, offering a promising pathway to overcome the limitations of traditional von Neumann architectures. Among various candidates, ferroelectric-based neuromorphic devices (including antiferroelectric devices) offer a compact, energy-efficient, and highly scalable neuromorphic hardware, making them promising candidates for LIF neurons. This review systematically explains ferroelectric-based LIF neurons, covering the fundamental principles of neuronal operation, the implementation of neuronal functionalities, the key performance metrics, and strategies for performance optimization. Specifically, the implementation of neuronal functionalities is discussed focusing on the realization of leaky behavior by introducing depolarizing or inducing antiferroelectric phase to achieve volatility, since the neuronal integration and firing behaviors can be easily mimicked through the inherent cumulative polarization switching. Moreover, the key performance metrics, including hardware cost, energy consumption, and endurance of devices are identified to demonstrate the comprehensive advantages of ferroelectric LIF neurons. Additionally, the review also covers the applications of ferroelectric LIF neurons. Finally, this review summarizes challenges and prospects of ferroelectric-based artificial neurons for advanced neuromorphic computing systems. This review aims to provide theoretical guidance and practical insights to support further progress in neuromorphic computing systems based on ferroelectric materials.
  • 加载中
  • [1] Tang J. S., Yuan F., Shen X. K., et al. (2019). Bridging biological and artificial neural networks with emerging neuromorphic devices: Fundamentals, progress, and challenges. Adv. Mater. 31:33. DOI:10.1002/adma.201902761

    View in Article CrossRef Google Scholar

    [2] Zhong S., Su L. R., Xu M. K., et al. (2025). Recent advances in artificial sensory neurons: Biological fundamentals, devices, applications, and challenges. Nano-Micro Lett. 17:49. DOI:10.1007/s40820-024-01550-x

    View in Article CrossRef Google Scholar

    [3] Peng H. H., Gan L. and Guo X. (2024). Memristor-based spiking neural networks: Cooperative development of neural network architecture/algorithms and memristors. Chip 3:17. DOI:10.1016/j.chip.2024.100093

    View in Article CrossRef Google Scholar

    [4] Yang J. H., Mao S. C., Chen K. T., et al. (2023). Emulating nociceptive receptor and LIF neuron behavior via ZrOx-based threshold switching memristor. Adv. Electron. Mater. 9:11. DOI:10.1002/aelm.202201006

    View in Article CrossRef Google Scholar

    [5] Izhikevich E. M. (2003). Simple model of spiking neurons. IEEE T. Neural Networ. 14:1569−1572. DOI:10.1109/tnn.2003.820440

    View in Article CrossRef Google Scholar

    [6] Zhe S. (2025). Progress on the application of supercomputer brain simulation technology. Chinese Journal of Contemporary Neurology & Neurosurgery 25:112. DOI:10.3969/j.issn.1672⁃6731.2025.02.003

    View in Article Google Scholar

    [7] Dutta S., Schafer C., Gomez J., et al. (2020). Supervised learning in all FeFET-based spiking neural network: Opportunities and challenges. Front. Neurosci. 14:14. DOI:10.3389/fnins.2020.00634

    View in Article CrossRef Google Scholar

    [8] Akopyan F., Sawada J., Cassidy A., et al. (2015). True North: Design and tool flow of a 65 mW 1 million neuron programmable neurosynaptic chip. IEEE Trans. Comput-Aided Des. Integr. Circuits Syst. 34:1537−1557. DOI:10.1109/tcad.2015.2474396

    View in Article CrossRef Google Scholar

    [9] Davies M., Srinivasa N., Lin T. H., et al. (2018). Loihi: A neuromorphic manycore processor with on-chip learning. IEEE Micro 38:82−99. DOI:10.1109/mm.2018.112130359

    View in Article CrossRef Google Scholar

    [10] Zhang Z. H., Tian G. L., Huo J. L., et al. (2023). Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci. China-Inf. Sci. 66:21. DOI:10.1007/s11432-023-3780-7

    View in Article CrossRef Google Scholar

    [11] Zhang X. M., Zhuo Y., Luo Q., et al. (2020). An artificial spiking afferent nerve based on Mott memristors for neurorobotics. Nat. Commun. 11:9. DOI:10.1038/s41467-019-13827-6

    View in Article CrossRef Google Scholar

    [12] Park W., Kim G., In J. H., et al. (2023). High amplitude spike generator in Au nanodot-incorporated NbOx Mott memristor. Nano Lett. 23:5399−5407. DOI:10.1021/acs.nanolett.2c04599

    View in Article CrossRef Google Scholar

    [13] Ren H. H., Li F. F., Wang M., et al. (2024). An ion-mediated spiking chemical neuron based on Mott memristor. Adv. Mater. 36:10. DOI:10.1002/adma.202403678

    View in Article CrossRef Google Scholar

    [14] Zhao Z. R., Luan W. H., Zhai Y. B., et al. (2025). Mott memristors for neuromorphics. Adv. Phys. Res. 4:19. DOI:10.1002/apxr.202400129

    View in Article CrossRef Google Scholar

    [15] del Valle J., Salev P., Kalcheim Y., et al. (2020). A caloritronics-based Mott neuristor. Sci. Rep. 10:10. DOI:10.1038/s41598-020-61176-y

    View in Article CrossRef Google Scholar

    [16] Wright C. D., Hosseini P. and Diosdado J. A. V. (2013). Beyond von-neumann computing with nanoscale phase-change memory devices. Adv. Funct. Mater. 23:2248−2254. DOI:10.1002/adfm.201202383

    View in Article CrossRef Google Scholar

    [17] Tuma T., Pantazi A., Le Gallo M., et al. (2016). Stochastic phase-change neurons. Nat. Nanotechnol. 11:693−699. DOI:10.1038/nnano.2016.70

    View in Article CrossRef Google Scholar

    [18] Cobley R. A., Hayat H. and Wright C. D. (2018). A self-resetting spiking phase-change neuron. Nanotechnology 29:8. DOI:10.1088/1361-6528/aab177

    View in Article CrossRef Google Scholar

    [19] Cao R. R., Zhang X. M., Liu S., et al. (2022). Compact artificial neuron based on anti-ferroelectric transistor. Nat. Commun. 13:10. DOI:10.1038/s41467-022-34774-9

    View in Article CrossRef Google Scholar

    [20] Wu Y. W., Yang H., He Q., et al. (2024). The investigation of neuromimetic dynamics in ferroelectrics via In situ TEM. Nano Lett. 24:7424−7431. DOI:10.1021/acs.nanolett.4c01626

    View in Article CrossRef Google Scholar

    [21] Wang Z. Y., Wang L. Y., Nagai M., et al. (2017). Nanoionics-enabled memristive devices: Strategies and materials for neuromorphic applications. Adv. Electron. Mater. 3:38. DOI:10.1002/aelm.201600510

    View in Article CrossRef Google Scholar

    [22] Wang Z. R., Joshi S., Savel'ev S., et al. (2018). Fully memristive neural networks for pattern classification with unsupervised learning. Nat. Electron. 1:137−145. DOI:10.1038/s41928-018-0023-2

    View in Article CrossRef Google Scholar

    [23] Nie F., Fang H., Wang J., et al. (2025). An adaptive solid-state synapse with bi-directional relaxation for multimodal recognition and spatio-temporal learning. Adv. Mater. 37:12. DOI:10.1002/adma.202412006

    View in Article CrossRef Google Scholar

    [24] Abbott L. F. and Regehr W. G. (2004). Synaptic computation. Nature 431:796−803. DOI:10.1038/nature03010

    View in Article CrossRef Google Scholar

    [25] Li B., Suutari B. S., Sun S. D., et al. (2020). Neuronal inactivity co-opts LTP machinery to drive potassium channel splicing and homeostatic spike widening. Cell 181:1547−1565.e1515. DOI:10.1016/j.cell.2020.05.013

    View in Article CrossRef Google Scholar

    [26] Bashir F., Alzahrani A., Abbas H., et al. (2025). Toward cognitive machines: Evaluating single device based spiking neural networks for brain-inspired computing. ACS Appl. Electron. Mater. 7:1329−1341. DOI:10.1021/acsaelm.4c02015

    View in Article CrossRef Google Scholar

    [27] Bian J. Y., Liu Z. Y., Tao Y., et al. (2024). Advances in memristor based artificial neuron fabrication-materials, models, and applications. Int. J. Extreme Manuf. 6:24. DOI:10.1088/2631-7990/acfcf1

    View in Article CrossRef Google Scholar

    [28] Park T. J., Deng S. B., Manna S., et al. (2023). Complex oxides for brain-inspired computing: A review. Adv. Mater. 35:38. DOI:10.1002/adma.202203352

    View in Article CrossRef Google Scholar

    [29] McCulloch W. S. and Pitts W. (1990). A logical calculus of the ideas immanent in nervous activity (reprinted from bulletin of mathematical biophysics, vol 5, pg 115-133, 1943). Bull. Math. Biol. 52:99−115. DOI:10.1016/s0092-8240(05)80006-0

    View in Article CrossRef Google Scholar

    [30] Hodgkin A. L. and Huxley A. F. (1952). A quantitative description of membrane current and its application to conduction and excitationin nerve. J. Physiol.-London 117:500−544. DOI:10.1113/jphysiol.1952.sp004764

    View in Article CrossRef Google Scholar

    [31] Morris C. and Lecar H. (1981). Voltage oscillations in the barnacle giant muscle-fiber. Biophys. J. 35:193−213. DOI:10.1016/s0006-3495(81)84782-0

    View in Article CrossRef Google Scholar

    [32] Abbott L. F. (1999). Lapicque's introduction of the integrate-and-fire model neuron (1907). Brain Res. Bull. 50:303−304. DOI:10.1016/s0361-9230(99)00161-6

    View in Article CrossRef Google Scholar

    [33] Adda C., Corraze B., Stoliar P., et al. (2018). Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron. J. Appl. Phys. 124:7. DOI:10.1063/1.5042756

    View in Article CrossRef Google Scholar

    [34] Bian J. Y., Tao Y., Wang Z. Q., et al. (2022). A stacked memristive device enabling both analog and threshold switching behaviors for artificial leaky integrate and fire neuron. IEEE Electron Device Lett. 43:1436−1439. DOI:10.1109/led.2022.3188786

    View in Article CrossRef Google Scholar

    [35] Duan Q. X., Jing Z. K., Zou X. L., et al. (2020). Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks. Nat. Commun. 11:13. DOI:10.1038/s41467-020-17215-3

    View in Article CrossRef Google Scholar

    [36] Wan C. J., Zhu L. Q., Liu Y. H., et al. (2016). Proton-conducting graphene oxide-coupled neuron transistors for brain-inspired cognitive systems. Adv. Mater. 28:3557−3563. DOI:10.1002/adma.201505898

    View in Article CrossRef Google Scholar

    [37] Li Z. X., Geng X. Y., Wang J. R., et al. (2021). Emerging artificial neuron devices for probabilistic computing. Front. Neurosci. 15:18. DOI:10.3389/fnins.2021.717947

    View in Article CrossRef Google Scholar

    [38] Zhao C. Y., Dong W. K., Yang Y., et al. (2025). Intrinsic ferroelectric CuVP2S6 for potential applications in neuromorphic recognition and translation. Nat. Commun. 16:9. DOI:10.1038/s41467-025-61508-4

    View in Article CrossRef Google Scholar

    [39] Oh S., Hwang H. and Yoo I. K. (2019). Ferroelectric materials for neuromorphic computing. APL Mater. 7:14. DOI:10.1063/1.5108562

    View in Article CrossRef Google Scholar

    [40] Huo J. L., Li L. Q., Zheng H. F., et al. (2024). Compact physical implementation of spiking neural network using ambipolar WSe2 n-type/p-type ferroelectric field-effect transistor. ACS Nano 18:28394−28405. DOI:10.1021/acsnano.4c11081

    View in Article CrossRef Google Scholar

    [41] Ma T. P. and Han J. P. (2002). Why is nonvolatile ferroelectric memory field-effect transistor still elusive. IEEE Electron Device Lett. 23:386−388. DOI:10.1109/led.2002.1015207

    View in Article CrossRef Google Scholar

    [42] Chen C., Yang M., Liu S., et al. (2019). Bio-inspired neurons based on novel leaky-FeFET with ultra-low hardware cost and advanced functionality for all-ferroelectric neural network. 39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits. IEEE. DOI:10.23919/VLSIT.2019.8776495

    View in Article Google Scholar

    [43] Luo J., Yu L. T., Liu T. Y., et al. (2019). Capacitor-less stochastic leaky-FeFET neuron of both excitatory and inhibitory connections for SNN with reduced hardware cost. 65th IEEE Annual International Electron Devices Meeting (IEDM). IEEE. DOI:10.1109/IEDM19573.2019.8993535

    View in Article Google Scholar

    [44] Lee G., Kim H. J., Shin E. J., et al. (2022). A novel split-gate ferroelectric FET for a compact and energy efficient neuron. IEEE Electron Device Lett. 43:1375−1378. DOI:10.1109/led.2022.3187624

    View in Article CrossRef Google Scholar

    [45] Müller J., Böscke T. S., Schröder U., et al. (2012). Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett. 12:4318−4323. DOI:10.1021/nl302049k

    View in Article CrossRef Google Scholar

    [46] Zhu Z., Zhang B. and Zheng Y. (2025). Progress on hafnium oxide-based emerging ferroelectric materials and applications. Microstructures 5:2025095. DOI:10.20517/microstructures.2025.32

    View in Article CrossRef Google Scholar

    [47] Zhang S. T., Kounga A. B., Jo W., et al. (2009). High-strain lead-free antiferroelectric electrostrictors. Adv. Mater. 21:4716−4720. DOI:10.1002/adma.200901516

    View in Article CrossRef Google Scholar

    [48] Gao J., Chien Y. C., Huo J. L., et al. (2025). Reconfigurable neuromorphic functions in antiferroelectric transistors through coupled polarization switching and charge trapping dynamics. Nat. Commun. 16:11. DOI:10.1038/s41467-025-59603-7

    View in Article CrossRef Google Scholar

    [49] Xu K. L., Wang T. Y., Lu C., et al. (2024). Novel two-terminal synapse/neuron based on an antiferroelectric hafnium zirconium oxide device for neuromorphic computing. Nano Lett. 24:11170−11178. DOI:10.1021/acs.nanolett.4c02142

    View in Article CrossRef Google Scholar

    [50] Kim J., Park E. C., Shin W., et al. (2024). All-ferroelectric spiking neural networks via morphotropic phase boundary neurons. Adv. Sci. 11:14. DOI:10.1002/advs.202407870

    View in Article CrossRef Google Scholar

    [51] Sun C., Wang X. L., Xu H. W., et al. (2022). Novel a-IGZO anti-ferroelectric FET LIF neuron with co-integrated ferroelectric FET synapse for spiking neural networks. International Electron Devices Meeting (IEDM). IEEE. DOI:10.1109/IEDM45625.2022.10019526

    View in Article Google Scholar

    [52] Liu H. F., Qin Y., Chen H. Y., et al. (2023). Artificial neuronal devices based on emerging materials: Neuronal dynamics and applications. Adv. Mater. 35:32. DOI:10.1002/adma.202205047

    View in Article CrossRef Google Scholar

    [53] Song Y., Jiang P. F., Xu P., et al. (2025). Fatigue of ferroelectric field effect transistor: Mechanisms and optimization strategies. J. Semicond. 46:13. DOI:10.1088/1674-4926/24100010

    View in Article CrossRef Google Scholar

    [54] Mulaosmanovic H., Breyer E. T., Mikolajick T., et al. (2019). Recovery of cycling endurance failure in ferroelectric FETs by self-heating. IEEE Electron Device Lett. 40:216−219. DOI:10.1109/led.2018.2889412

    View in Article CrossRef Google Scholar

    [55] Ali T., Polakowski P., Riedel S., et al. (2018). High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty. IEEE Trans. Electron Devices 65:3769−3774. DOI:10.1109/ted.2018.2856818

    View in Article CrossRef Google Scholar

    [56] Tan A. J., Chatterjee K., Zhou J. R., et al. (2020). Experimental demonstration of a ferroelectric HfO2-based content addressable memory cell. IEEE Electron Device Lett. 41:240−243. DOI:10.1109/led.2019.2963300

    View in Article CrossRef Google Scholar

    [57] Yurchuk E., Mueller S., Martin D., et al. (2014). Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories. International Reliability Physics Symposium (IRPS). IEEE. DOI:10.1109/IRPS.2014.6860603

    View in Article Google Scholar

    [58] Yurchuk E., Müller J., Müller S., et al. (2016). Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories. IEEE Trans. Electron Devices 63:3501−3507. DOI:10.1109/ted.2016.2588439

    View in Article CrossRef Google Scholar

    [59] Gong N. B. and Ma T. P. (2018). A study of endurance issues in HfO2-based ferroelectric field effect transistors: charge trapping and trap generation. IEEE Electron Device Lett. 39:15−18. DOI:10.1109/led.2017.2776263

    View in Article CrossRef Google Scholar

    [60] Wang Z., Crafton B., Gomez J., et al. (2018). Experimental demonstration of ferroelectric spiking neurons for unsupervised clustering. 64th IEEE Annual International Electron Devices Meeting (IEDM). IEEE. DOI:10.1109/IEDM.2018.8614586

    View in Article Google Scholar

    [61] Luo X. P., Yang P., Yu S. H., et al. (2024). The optical-electronic integrated spiking neurons based on antiferroelectric thin-film transistors. IEEE Trans. Electron Devices 71:6442−6447. DOI:10.1109/ted.2024.3450440

    View in Article CrossRef Google Scholar

    [62] Kim J., Park E. C., Shin W., et al. (2024). Analog reservoir computing via ferroelectric mixed phase boundary transistors. Nat. Commun. 15:14. DOI:10.1038/s41467-024-53321-2

    View in Article CrossRef Google Scholar

    [63] Stoliar P., Tranchant J., Corraze B., et al. (2017). A leaky-integrate-and-fire neuron analog realized with a Mott insulator. Adv. Funct. Mater. 27:7. DOI:10.1002/adfm.201604740

    View in Article CrossRef Google Scholar

    [64] Wang X. J., Zhu Y. X., Zhou Z. L., et al. (2025). Memristor-based spiking neuromorphic systems toward brain-inspired perception and computing. Nanomaterials 15:23. DOI:10.3390/nano15141130

    View in Article CrossRef Google Scholar

    [65] Chen Y. N., Zhang G. B., Liu F., et al. (2025). Revolutionizing neuromorphic computing with memristor-based artificial neurons. J. Semicond. 46:11. DOI:10.1088/1674-4926/24110006

    View in Article CrossRef Google Scholar

    [66] Zuo W. B., Zhu Q. H., Fu Y. Y., et al. (2023). Volatile threshold switching memristor: An emerging enabler in the AIoT era. J. Semicond. 44:23. DOI:10.1088/1674-4926/44/5/053102

    View in Article CrossRef Google Scholar

    [67] Hassan N., Hu X., Jiang-Wei L., et al. (2018). Magnetic domain wall neuron with lateral inhibition. J. Appl. Phys. 124:10. DOI:10.1063/1.5042452

    View in Article CrossRef Google Scholar

    [68] Li S., Kang W., Huang Y. Q., et al. (2017). Magnetic skyrmion-based artificial neuron device. Nanotechnology 28:7. DOI:10.1088/1361-6528/aa7af5

    View in Article CrossRef Google Scholar

    [69] Bindal N., Rajib M. M., Raj R. K., et al. (2025). Antiferromagnetic skyrmion-based energy-efficient leaky integrate and fire neuron device. Nanotechnology 36:10. DOI:10.1088/1361-6528/adb8c1

    View in Article CrossRef Google Scholar

    [70] Wang D., Tang R. F., Lin H., et al. (2023). Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. Nat. Commun. 14:12. DOI:10.1038/s41467-023-36728-1

    View in Article CrossRef Google Scholar

    [71] Lone A. H., Tang M., Rahimi D. N., et al. (2025). Spintronic memtransistor leaky integrate and fire neuron for spiking neural networks. Adv. Electron. Mater. 11:15. DOI:10.1002/aelm.202500091

    View in Article CrossRef Google Scholar

    [72] Verma G., Bindal N., Nisar A., et al. (2021). Advances in neuromorphic spin-based spiking neural networks: A review. IEEE Nanotechnol. Mag. 15:33−44. DOI:10.1109/mnano.2021.3098219

    View in Article CrossRef Google Scholar

    [73] Majumdar S. (2024). Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures. Front. Nanotechnol. 6:26. DOI:10.3389/fnano.2024.1371386

    View in Article CrossRef Google Scholar

    [74] Liu L., Wang D., Wang D. D., et al. (2024). Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware. Nat. Commun. 15:12. DOI:10.1038/s41467-024-48631-4

    View in Article CrossRef Google Scholar

    [75] Liang Q., Huang Y. J., Tan Y. L., et al. (2025). Recent progress in neuromorphic computing based on spin-orbit torque devices. J. Phys. D-Appl. Phys. 58:29. DOI:10.1088/1361-6463/ae1241

    View in Article CrossRef Google Scholar

    [76] Chen K. Y., Chen P. H., Kao R. W., et al. (2018). Impact of plasma treatment on reliability performance for HfZrOx-based metal-ferroelectric-metal capacitors. IEEE Electron Device Lett. 39:87−90. DOI:10.1109/led.2017.2771390

    View in Article CrossRef Google Scholar

    [77] Chen Y. H., Su C. J., Yang T. H., et al. (2020). Improved TDDB reliability and interface states in 5-nm Hf0.5Zr0.5O2 ferroelectric technologies using NH3 plasma and microwave annealing. IEEE Trans. Electron Devices 67:1581-1585. DOI:10.1109/ted.2020.2973652.

    View in Article Google Scholar

    [78] Lee J., Song M. S., Jang W. S., et al. (2022). Modulating the ferroelectricity of hafnium zirconium oxide ultrathin films via interface engineering to control the oxygen vacancy distribution. Adv. Mater. Interfaces 9:11. DOI:10.1002/admi.202101647

    View in Article CrossRef Google Scholar

    [79] Liu J.-Q., Zhu H.-L., Liu F., et al. (2025). Defect-induced interfacial modulation for enhanced resistive switching performance in antiferroelectric/ferroelectric heterostructures. Microstructures 5:2025064. DOI:10.20517/microstructures.2024.156

    View in Article CrossRef Google Scholar

    [80] Mulaosmanovic H., Chicca E., Bertele M., et al. (2018). Mimicking biological neurons with a nanoscale ferroelectric transistor. Nanoscale 10:21755−21763. DOI:10.1039/c8nr07135g

    View in Article CrossRef Google Scholar

  • Cite this article:

    Lu M., Wang J., Fang H., et al. (2026). Ferroelectric-based leaky integrate-and-fire neurons: A review on device design and performance optimization. The Innovation Materials 4:100202. https://doi.org/10.59717/j.xinn-mater.2026.100202
    Lu M., Wang J., Fang H., et al. (2026). Ferroelectric-based leaky integrate-and-fire neurons: A review on device design and performance optimization. The Innovation Materials 4:100202. https://doi.org/10.59717/j.xinn-mater.2026.100202

Welcome!

To request copyright permission to republish or share portions of our works, please visit Copyright Clearance Center's (CCC) Marketplace website at marketplace.copyright.com.

Figures(6)     Tables(2)

Share

  • Share the QR code with wechat scanning code to friends and circle of friends.

Article Metrics

Article views(2640) PDF downloads(2302)

Relative Articles

Cited by

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint