Chinese team achieves room-temperature single-electron quantum memory breakthrough
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REFERENCES
[1] Liu C., Xiang Y., Wang C. et al. (2026). Robust single-electron memory with quantum states manipulation. Science 393:294–299. DOI:10.1126/science.aeg6638 [2] Wu L., Wang A., Shi J. et al. (2021). Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nat. Nanotechnol. 16:882–887. DOI:10.1038/s41565-021-00904-5 [3] Liu L., Liu C., Jiang L. et al. (2021). Ultrafast non-volatile flash memory based on van der Waals heterostructures. Nat. Nanotechnol. 16:874−881. DOI:10.1038/s41565-021-00921-4 -
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News Team (2026). Chinese team achieves room-temperature single-electron quantum memory breakthrough. The Innovation Materials 4:100230. https://doi.org/10.59717/j.xinn-mater.2026.100230
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News Team (2026). Chinese team achieves room-temperature single-electron quantum memory breakthrough. The Innovation Materials 4:100230. https://doi.org/10.59717/j.xinn-mater.2026.100230
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Figure 1.
Schematic diagram of a two-dimensional single-electron memory device at room temperature.
