Strategies for characterization of defect states and long-term stability of materials and devices including III-V and 2D materials
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Chen Y., Wei H., Lin J., et al. (2026). Strategies for characterization of defect states and long-term stability of materials and devices including III-V and 2D materials. The Innovation Materials 4:100232. https://doi.org/10.59717/j.xinn-mater.2026.100232
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Chen Y., Wei H., Lin J., et al. (2026). Strategies for characterization of defect states and long-term stability of materials and devices including III-V and 2D materials. The Innovation Materials 4:100232. https://doi.org/10.59717/j.xinn-mater.2026.100232
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Figure 1.
Schematic illustrations of semiconductor materials with DOS characteristics and DOS extraction methods
