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REFERENCES
[1] Chen Y., Zhang Q., Liu M. et al. Oxygen-vacancy origin of robust surface-proximity spin centers in silicon carbide. Innov. Phys. 1:100013. DOI:10.59717/j.tip.2026.100013 [2] Chen Y., Zhang Q., Teng Y. et al. (2025). Single-molecule scale nuclear magnetic resonance spectroscopy using a robust near-infrared spin sensor. arXiv:2512.10278. DOI:10.48550/arXiv.2512.10278 -
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Wrachtrup J. (2026). Silicon carbide turns quantum. The Innovation Physics 1:100003. https://doi.org/10.59717/j.tip.2026.100003
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Wrachtrup J. (2026). Silicon carbide turns quantum. The Innovation Physics 1:100003. https://doi.org/10.59717/j.tip.2026.100003
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Figure 1.
Revealing the microscopic origin of PL5 and PL6 centers in 4H-SiC.
