Research progress on the working mechanisms of QLEDs based on novel characterization methods

Yang Zhao; Boning Wu; Bo Li; Yaxuan Liu; Olga Kulalovich; Roman Vasiliev; Xingliang Dai; Wenming Tian; Fengjia Fan; Shengye Jin; Shuai Chang

doi:10.59717/j.xinn-mater.2026.100223

The Innovation Materials > 2026 Vol. 4 > No. 3 > 100223

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Research progress on the working mechanisms of QLEDs based on novel characterization methods

1.
School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
2.
Faculty of Materials Science, Shenzhen MSU-BIT University, Shenzhen 518115, China
3.
State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
4.
Laboratory of Spin Magnetic Resonance, School of Physical Sciences, Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China
5.
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus, Minsk 220072, Belarus
6.
Department of Materials Science, Department of Chemistry, Lomonosov Moscow State University, Moscow 119991, Russia
7.
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
8.
Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
9.
Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China

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Corresponding authors: boning@dicp.ac.cn (B.W.); schang@smbu.edu.cn (S.C.)
Received Date: March 04, 2026

Accepted Date: June 22, 2026

Published Online: June 22, 2026

The Innovation Materials 4(3), https://doi.org/10.59717/j.xinn-mater.2026.100223 | Cite this article

GRAPHICAL ABSTRACT

GRAPHICAL ABSTRACT

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PUBLIC SUMMARY

PUBLIC SUMMARY
1. Advanced operando and multiscale characterization of Quantum-dot light emitting diodes (QLEDs).
  
  Investigation of carrier dynamics, charge imbalance, interfacial interactions, and QLED degradation.
  
  Future directions and challenges toward highly efficient and stable QLED technologies.

ABSTRACT

ABSTRACT

Quantum-dot light-emitting diodes (QLEDs) have great potential to deliver next-generation displays and lighting, yet it is difficult to achieve improvements in external quantum efficiency (EQE), roll-off, and reasonably operational stability due to their coupled process, such as charging-injection imbalance, carrier accumulation/leakage, field-induced effects, interfacial quenching, and irreversible degradation, which are hard to isolate with conventional steady-state measurement. The techniques of multiscale and operando characterization methods are summarized in this review and arranged in a hierarchical manner of diagnostic tools connecting observables to quantitative parameters and design rules applicable to devices. Single-dot photoluminescence (PL)/electroluminescence (EL) with photon-correlation and time-resolved detection discloses the intermittency during charging, the Auger loss, and charge-state signal injection/recombination rates at the bias. For the device level, injection delay is measured with single carrier structures and transient electroluminescence/current (TREL/TRC) measurement systems, and electrically excited transient absorption (ETA) is employed to inseparably isolate the carrier distributions of charge storage and recombination and leakage of quantum-confined Stark effect (QCSE). Additionally, electroabsorption (EA) tracks layer-resolved internal-field evolution and voltage-loss pathways during aging. The approaches used to differentiate between interfacial quenching and permanent damage, and localize the hotspots driven failure are complementary: nanosecond transient absorption (ns-TA), in-situ EL/PL, and time-gated mapping. These advanced characterization methods provide a deeper understanding of working mechanisms, enabling the development of more effective strategies to enhance the efficiency, stability, and long-term performance of QLEDs in practical applications.
- Quantum-dot Light emitting Diodes /
- Operando Characterization /
- Working Mechanism /
- Multimodal Characterization /
- Time-resolved Spectroscopy

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Zhao Y., Wu B., Li B., et al. (2026). Research progress on the working mechanisms of QLEDs based on novel characterization methods. The Innovation Materials 4:100223. https://doi.org/10.59717/j.xinn-mater.2026.100223

Zhao Y., Wu B., Li B., et al. (2026). Research progress on the working mechanisms of QLEDs based on novel characterization methods. The Innovation Materials 4:100223. https://doi.org/10.59717/j.xinn-mater.2026.100223

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